33. [renewable energies] D. Takhar, B. Birajdar, and R. K. Ghosh*, “Dual Functionality of BiN Monolayer: Unraveling its Photocatalytic and Piezocatalytic Water Splitting Properties,” Accepted in RSC Physical Chemistry Chemical Physics, May 2024. (Impact Factor: 3.676). Article Link.

32. [spintronics] S. Bhardwaj, P. Kumar, R. K. Ghosh, Bijoy K. Kuanr, “Effect of Ta buffer layer on the structural and magnetic properties of stoichiometric intermetallic FeAl alloy,” AIP Advances, vol. 14, pp. 025226, Feb 2024. (Impact Factor: 1.60). Article Link.

31. [nanoelectronics] Y. -C. Luo, A. Khanna, B. Grisafe, J. Sun, S. Dutta, L. E. Noskin, C. Adamo, A. B. Mei, R. K. Ghosh, M. Colletta, M. E. Holtz, V. Gambin, L. F. Kourkoutis, S. Yu, D. G. Schlom, and S. Datta, “Correlated Oxide Selector for Cross-point Embedded Non-Volatile Memory,” IEEE Trans. Elec. Dev., vol. 71, no. 1, pp. 916-921, Jan. 2024,. (Impact Factor: 3.10). Article Link.

30. [nanoelectronics] U. Chitnis, S. Kumar, S. A. Bukhari, C. Soren, R. K. Ghosh*, A. Goswami*, “Microstructural and electrical investigation of polymorph stabilization and multistate transition in interface engineered epitaxial VO2 films”, Applied Surface Science, Vol. 637, pp. 157916, Jun 2023. (Impact Factor: 6.70). Article Link.

29. [renewable energies] D. Takhar, B. Birajdar, and R. K. Ghosh*, “Photocatalytic and Piezocatalytic Properties of h-NbP and h-NbN Monolayers for Green Hydrogen Production: Insight from Density Functional Theory Calculations”, ACS Journal of Physical Chemistry C, vol. 127, no. 7, pp. 3408-3416, Feb 2023. (Impact Factor: 4.18). Article Link.

28. [spintronics] S. Bhardwaj, B. K. Kuanr, and R. K. Ghosh*, “Magnetocrystalline anisotropy energy and Gilbert damping of two-dimensional half-metallic RhX2 (X = I, Br, Cl) ferromagnets: Density functional theory study”, AIP Advances, vol. 13, pp. 025002, Feb 2023. (Impact Factor: 1.60). Article Link.

27. [energy storage & conversion] S. De, D. Asthana, T. Chinthakuntla, S. K. Keshri, R. K. Ghosh, G. Hundal, R. Kumar, S. Singh, R. Chatterjee, and P. Mukhopadhyay, “A Folded π-system with Supramolecularly Oriented Dipoles: Single-Component Piezoelectric Relaxor with NLO-Activity”, RSC Chemical Science, vol. 14, pp. 2547-2552, Jan 2023. (Impact Factor: 8.40) Article Link.

26. [spintronics] M. Sharma, J. Rani, S. Bhardwaj, A. Agrawal, R. K. Ghosh, and Bijoy K. Kuanr, “Effect of Annealing Temperature on Structural, Optical, Magnetic and Electrical Properties of CrFeO3 Multiferroic Nanoparticles: A validation to first-principle calculations”, Journal of Alloys and Compounds, vol. 929, pp. 167338, Sept 2022. (Impact Factor: 6.20) Article Link.

25. [spintronics] V. Sharma, V. Sharma, R. K. Ghosh, and B. K. Kuanr, “Magnetization dynamics and spin pumping in Heusler compound Co2FeSi interfaced with MoS2”, Journal of Applied Physics, vol. 132, no. 13, pp. 133905, Sept 2022. (Impact Factor: 2.80). Article Link.

24. [spintronics] V. Sharma, R. K. Ghosh, and B. K. Kuanr, “Influence of ferromagnetic layer thickness on the Gilbert damping and magnetocrystalline anisotropy in PLD grown epitaxial Co2FeSi Heusler alloy thin films”, Results in Surfaces and Interfaces, vol. 6, pp. 100052, Feb 2022. (Impact Factor: --) Article Link.

23. [renewable energies] R. Tiwari, B. Birajdar, R. K. Ghosh*, “Intrinsic ferroelectricity and large bulk photovoltaic effect in novel two-dimensional buckled honeycomb-like lattice of NbP: first-principles study”, IOP Journal of Physics: Condensed Matter, vol. 33, pp. 385302, July 2021. (Impact Factor: 2.74). Article Link.

22. [spintronics] R. K. Ghosh*, Ashna Jose, and Geetu Kumari, “Intrinsic spin-dynamical properties of two-dimensional half-metallic FeX2 (X= Cl, Br, I) ferromagnets: Insight from density functional theory calculations”, Physical Review B, vol. 103, pp.  054409, Jan 2021. (Impact Factor: 3.70). Article Link.

21. [renewable energies] R. Tiwari, B. Birajdar, R. K. Ghosh*, “First-principles calculation of shift current bulk photovoltaic effect in two-dimensional α-In2Se3”, Physical Review B, vol. 101, pp.  235448, Jun 2020. (Impact Factor: 3.70). Article Link.

20. [spintronics] H. Kaur, M. Sharma, R. K. Ghosh, S. Mohapatra, B. K. Kuanr, “Magnetic bipolar transistor based on ZnO/NiO/Si Heterostructure using Pulsed Laser Deposition” AIP Advances, vol. 10, pp. 015119, Jan 2020. (Impact Factor: 1.60). Article Link.

19. [nanoelectronics] R. Zhao, C. L. Lo, F. Zhang, R. K. Ghosh, T. Knobloch, M. Terrones, Z. Chen, J. Robinson, "Incorporating Niobium in MoS2 at BEOL‐Compatible Temperatures and its Impact on Copper Diffusion Barrier Performance",  Advanced Materials Interfaces, vol. 6, no. 22, pp.  1901055, Sept 2019.   (Impact Factor: 6.39). Article Link.

18. [renewable energies] R. Tiwari, B. Birajdar, R. K. Ghosh*, “Strain engineering of ferroelectric KNbO3 for bulk photovoltaic applications: An insight from Density Functional Theory calculations”, IOP Journal of Physics: Condensed Matter, vol. 31, pp. 505502, Sept 2019. (Impact Factor: 2.74). Article Link.

17. [spintronics] V. Sharma, R. K. Ghosh, B Kuanr, "Investigation of room temperature ferromagnetism in transition metal doped BiFeO3", IOP Journal of Physics: Condensed Matter, vol. 31, pp. 395802, July 2019.  (Impact Factor: 2.74). Article Link.

16. [nanoelectronics] R. Zhao, B. Grisafe, R. K. Ghosh, K. Wang, S. Datta, J. Robinson "Stabilizing the commensurate charge-density wave in 1T-tantalum disulfide at higher temperatures via potassium intercalation", RSC Nanoscale, vol. 11, pp. 6016-6022, 2019. (Impact Factor: 8.30). Article Link.

15. [nanoelectronics] B. Grisafe, R. Zhao, R. K. Ghosh, J. A Robinson, and S. Datta, “Electrically triggered insulator-to-metal phase transition in two-dimensional (2D) heterostructures”, Appl. Phys. Lett., vol. 113, no. 14, pp. 142101, 2018. (Impact Factor: 3.97). Article Link.

14. [nanoelectronics] M. Brahma, M. Bescond, D. Logoteta, R. K. Ghosh, and S. Mahapatra, “Germanane MOSFET for Subdeca Nanometer High-Performance Technology Nodes”, IEEE Trans. Elec. Dev., vol. 65, no. 3, pp. 1198-1204, Mar. 2018. (Impact Factor: 3.10). Article Link.

13. [quantum materials] R. Zhao, B. Grisafe, R. K. Ghosh, S. Holoviak, B. Wang, K. Wang, N. Briggs, M. A. Haque, S. Datta, J. A. Robinson, “Two-dimensional tantalum disulfide: controlling structure and properties via synthesis”, IOP 2D Materials, vol. 5, pp. 025001, 2018. (Impact Factor: 6.86). Article Link.

12. [nanoelectronics] C. S. Braucks, R. Pandey, R. N. Sajjad, M. Barth, R. K. Ghosh, B. Grisafe, P. Sharma, N. von den Driesch, A. Vohra, B. Rayner, R. Loo, S. Mantl, D. Buca, C-C. Yeh, C-H. Wu, W. Tsai, D. Antoniadis, S. Datta, “Fabrication, Characterization and Analysis of Ge/GeSn Hetero-junction p-type Tunnel Transistors”, IEEE Trans. Elec. Dev., vol. 64, no. 10, pp. 4354-4362, Oct. 2017. (Impact Factor: 3.10). Article Link.

11. [quantum materials] Z. Y A. Balushi, K. Wang, R. K. Ghosh, R. A. Vilá, S. M Eichfeld, J. D. Caldwell, X. Qin, Y-C. Lin, P. A DeSario, G. Stone, S. Subramanian D. F Paul, R. M. Wallace, S. Datta, J. M Redwing, J. A Robinson, “Two-dimensional gallium nitride realized via graphene encapsulation”, Nature Materials, vol. 15, pp. 1166-1171, 2016. (Impact Factor: 47.66). Article Link.

10. [nanoelectronics] Y-C. Lin, R. K. Ghosh, R. Addou, N. Lu, S. M. Eichfeld, H. Zhu, M-Y. Li, X. Peng, M. J. Kim, L-J. Li, R. M. Wallace, S. Datta, and J. A. Robinson, “Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures”, Nature Communications, vol. 6, pp. 7311, 2015. (Impact Factor: 16.60). Article Link.

09. [quantum materials] Y-C. Lin, C-Y. S. Chang, R. K. Ghosh, J. Li, H. Zhu, R. Addou, B. Diaconescu, T. Ohta, X. Peng, N. Lu, M. J. Kim, J. T. Robinson, R. M Wallace, T. S. Mayer, S. Datta, L-J. Li, and J. A. Robinson, “Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene”, ACS Nano-Letters, vol. 14, no. 12, pp. 6936–6941, 2014. (Impact Factor: 12.26). Article Link.

08. [nanoelectronics] M. Huefner, R. K. Ghosh, E. Freeman, N. Shukla, H. Paik, D. G. Schlom, and S. Datta, “Hubbard gap modulation in vanadium dioxide nanoscale tunnel junctions”, ACS Nano-Letters, vol. 14, no.11, pp. 6115–6120, 2014. (Impact Factor: 12.26). Article Link.

07. [nanoelectronics] R. K. Ghosh, M. Brahma, and S. Mahapatra, “Germanane: a Low Effective Mass and High Bandgap 2-D Channel material for Future FETs”, IEEE Trans. Elec. Dev., vol. 61, no. 7, pp. 2309- 2315, 2014. (Impact Factor: 3.10). Article Link.

06. [nanoelectronics] R. K. Ghosh and S. Mahapatra, “Monolayer transition metal dichalcogenide channel based tunnel transistor”, IEEE Journal of the Elec. Dev. Soc., vol. 1, no. 10, pp. 175-180, Nov. 2013. (Within top 10 popular articles from Dec 2013 to June 2016). (Impact Factor: 2.30). Article Link.

05. [nanoelectronics] A. Sengupta, R. K. Ghosh and S. Mahapatra, “Performance analysis of strained monolayer MoS2 MOSFET”, IEEE Trans. Elec. Dev., vol. 90, no. 9, pp. 2782-2787, Sept. 2013. (Impact Factor: 3.10). Article Link.

04. [nanoelectronics] R. K. Ghosh and S. Mahapatra, “Proposal for graphene-boron nitride heterobilayer based tunnel FET”, IEEE Trans. Nanotech., vol. 12, no. 5, Sept 2013. (Impact Factor: 2.40). Article Link.

03. [nanoelectronics] R. K. Ghosh and S. Mahapatra, “Direct Band-to-band tunneling in reverse biased MoS2 nanoribbon p-n junctions”, IEEE Trans. Elec. Dev., vol. 60, no. 1, pp. 274-279, Jan. 2013. (Impact Factor: 3.10). Article Link.

02. [nanoelectronics] R. K. Ghosh, S. Bhattacharya and S. Mahapatra, “k.p based closed form energy band gap and transport electron effective mass model for [100] and [110] relaxed and strained Silicon nanowire”, Solid State Electronics, vol. 80, pp. 124–134, Feb. 2013. (Impact Factor: 1.90). Article Link.

01. [nanoelectronics] R. K. Ghosh, S. Bhattacharya and Santanu Mahapatra, “Physics based band gap model for relaxed and strained [100] silicon nanowires”, IEEE Trans. Elec. Dev., vol. 59, no. 6, pp. 1765-1772, 2012. (Impact Factor: 3.10). Article Link.

11. [spintronics] S. Bhardwaj, P. Kumar, R. K. Ghosh, Bijoy K. Kuanr, “Effect of Ta buffer layer on the structural and magnetic properties of stoichiometric intermetallic FeAl alloy,” 68th Annual Conference on Magnetism and Magnetic Materials (MMM), 2023, October 30–Nov 3, Dallas, TX, USA. Article Link.

10. [nanoelectronics] A. Haroon, R. K. Ghosh, and S. Saurabh, “Implementation of Probabilistic Bits (Pbits) using Low Barrier Magnets: Investigation and Analysis”, 36th International Conference on VLSI Design (VLSID), 2023, Jan 8-12, Hyderabad, India. Article Link.

09. [spintronics] S. Bhardwaj, B. K. Kuanr, and R. K. Ghosh*, “Magnetocrystalline anisotropy energy and Gilbert damping of two-dimensional half-metallic RhX2 (X = I, Br, Cl) ferromagnets: Density functional theory study”, 67th Annual Conference on Magnetism and Magnetic Materials (MMM), 2022, Oct 31 - Nov 4, Minneapolis, USA. Article Link.

08. [spintronics] H. Kaur, M. Sharma, R. K. Ghosh, S. Mohapatra, B. K. Kuanr, “Magnetic bipolar transistor based on ZnO/NiO/Si Heterostructure using Pulsed Laser Deposition”, 64th Annual Conference on Magnetism and Magnetic Materials (MMM), 2019, Nov 4-10, Las Vegas, USA. Article Link.

07. [nanoelectronics] N. Shukla, R. K. Ghosh, B. Grisafe, S. Datta, “Fundamental Mechanism Behind Volatile and Non-Volatile Switching in Metallic Conducting Bridge RAM”, IEEE International Electron Devices Meeting (IEDM), 2017, Dec 2-6, San Francisco, USA (DOI: 10.1109/IEDM.2017.8268325). Article Link.

06. [nanoelectronics] J. A. Smith, K. Ni, R. K. Ghosh, J. Xu, M Badaroglu, PR. C. Chidambaram, S. Datta, “Investigation of Electrically Gate-All-Around Hexagonal Nanowire FET (HexFET) Architecture for 5 nm Node Logic and SRAM Applications”, ESSCIRC-ESSDERC 2017, Sept 11-14, Leuven, Belgium (DOI: 10.1109/ESSDERC.2017.8066623). Article Link.

05. [nanoelectronics] N. Shukla, B. Grisafe, R. K. Ghosh, N. Jao, A. Aziz, J. Frougier, M. Jerry, S. Sonde, S. Rouvimov, T. Orlova, S. Gupta, S. Datta, “Ag/HfO2 based Threshold Switch with Extreme Non-Linearity for Unipolar Cross-Point Memory and Steep-slope Phase-FETs”, IEEE International Electron Devices Meeting (IEDM) 2016, Dec 3-7, San Francisco, USA (DOI: 10.1109/IEDM.2016.7838542). Article Link.

04. [nanoelectronics] R. Pandey, C. Schulte-Braucks, R. N. Sajjad, M. Barth, R. K. Ghosh, B. Grisafe, P. Sharma, N. von den Driesch, A. Vohra, B. Rayner, R. Loo, S. Mantl, D. Buca, C-C. Yeh, C-H. Wu, W. Tsai, D. Antoniadis, and S. Datta, “Performance Benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 and Ge/Ge0.93Sn0.07 Hetero-junction Tunnel FETs”, IEEE International Electron Devices Meeting (IEDM) 2016, Dec 3-7, San Francisco, USA (DOI: 10.1109/IEDM.2016.7838455). Article Link.

03. [quantum materials] R. K. Ghosh, and S. Datta, “Orbitronics - harnessing metal insulator phase transition in 1T-MoSe2”, SISPAD 2016, September 6-8, 2016, Washington, DC, USA (DOI: 10.1109/SISPAD.2016.7605156). Article Link.

02. [nanoelectronics] R. Pandey, R. K. Ghosh, and Suman Datta, “Band structure engineered Germanium-Tin (GeSn) p-channel tunnel transistors”,   2016 International Symposium on VLSI Technology, Systems and   Application (VLSI-TSA), April 27, 2016, Hsinchu, Taiwan (DOI: 10.1109/VLSI-TSA.2016.7480493). Article Link.

01. [nanoelectronics] R. K. Ghosh, and S. Datta, “Heterojunction Resonant Tunneling Diode at the Atomic Limit”, SISPAD 2015, September 9-11, 2015, Washington, DC, USA (DOI: 10.1109/SISPAD.2015.7292310). Article Link.